Microelectronics and Optoelectronics


$189.00
Proceedings of the 25th Annual Symposium of Connecticut Microelectronics and Optoelectronics Consortium (CMOC 2016)
The 25th Annual Symposium of Connecticut Microelectronics and Optoelectronics Consortium (CMOC 2016)

This book features the selected articles from the 25th annual symposiums Connecticut Microelectronics and Optoelectronics Consortium (CMOC), that focus on micro/nano-electronics and optoelectronics/Nano-photonics, to cover not only the technologies, but also the applications ranging from biosensors/nano-biosystems, to cyber security.

Enabling materials research involving growth and characterization of novel devices such as multi-bit nonvolatile random access memory with fast erase, high performance circuits, and their potential applications in developing new high-speed systems. Other articles focus on emerging nanoelectronic devices including topological insulators, spatial wavefunction switching (SWS) FETs as compact high-speed 2-bit SRAM circuits, quantum dot channel (QDC) FETs. Fundamental work on critical layer thickness in ZnSe/GaAs and other material systems impacts electronic and photonic devise integrating mismatched layers are also reported. While another article investigates linearly graded GaAsP-GaAs system with emphasis on strain relaxation.

Based on these technologies, area of analyzes multiple junction solar cells using semiconductors with different energy gaps, as a possible application were also featured; Pixel characterization of protein-based retinal implant, as well as a low-power and low-data-rate (100 kbps) fully integrated CMOS impulse radio ultra-wideband (IR-UWB) transmitter were investigated as a potential candidate for biomedical application. While other articles looked at carbon nanofibers/nanotubes for electrochemical sensing. In the area of cyber security, two articles present encrypted electron beam lithography fabricated nanostructures for authentication and nano-signatures for the identification of authentic electronic components.

In summary, papers presented in this volume involve various aspects of high performance materials and devices for implementing high-speed electronic systems.

Sample Chapter(s)
Fabrication of Robust Nano-Signatures for Identification of Authentic Electronic Components and Counterfeit Avoidance (1,225 KB)

Contents:
  • Preface
  • Fabrication of Robust Nano-Signatures for Identification of Authentic Electronic Components and Counterfeit Avoidance (K Ahi, A Rivera, A Mazadi and M Anwar)
  • Progression of Strain Relaxation in Linearly-Graded GaAs1-yPy/GaAs (001) Epitaxial Layers Approximated by a Finite Number of Sublayers (T Kujofsa and J E Ayers)
  • Carbon Nanotubes, Nanofibers and Nanospikes for Electrochemical Sensing: A Review (A S Shanta, K A Al Mamun, S K Islam, N McFarlane and D K Hensley)
  • Spatial Wavefunction Switched (SWS) FET SRAM Circuits and Simulation (B Saman, P Gogna, E-S Hasaneen, J Chandy, E Heller and F C Jain)
  • Carbon Nanotube Synthesis from Block Copolymer Deposited Catalyst (K Woods, J Silliman and T C Schwendemann)
  • Dynamical X-Ray Diffraction Analysis of Triple-Junction Solar Cells on Germanium (001) Substrates (F A Althowibi and J E Ayers)
  • Pixel Characterization of a Protein-Based Retinal Implant Using a Microfabricated Sensor Array (J A Greco, L A L Fernandes, N L Wagner, M Azadmehr, P Häfliger, E A Johannessen and R R Birge)
  • A Low-Power Low-Data Rate Impulse Radio Ultra-Wideband (IR-UWB) Transmitter (I Mahbub, S Shamsir and S K Islam)
  • Multi-Bit NVRAMs Using Quantum Dot Gate Access Channel (M Lingalugari, P-Y Chan, J Chandy, E Heller and F Jain)
  • Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs) (J Kondo, M Lingalugari, P Mirdha, P-Y Chan, E Heller and F Jain)
  • Denoising and Beat Detection of ECG Signal by Using FPGA (D Alhelal and M Faezipour)
  • Encrypted Electron Beam Lithography Nano-Signatures for Authentication (K Ahi, A Rivera and M Anwar)
  • Topological Insulators: Electronic Structure, Material Systems and Applications (P Sengupta)
  • Mosaic Crystal Model for Dynamical X-Ray Diffraction from Step-Graded InxGa1-xAs and InxAl1-xAs/GaAs (001) Metamorphic Buffers and Device Structures (P B Rago and J E Ayers)
  • Critical Layer Thickness: Theory and Experiment in the ZnSe/GaAs (001) Material System (T Kujofsa and J E Ayers)
Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields.
ISBN: 9789813232334
Cover Type: Hardcover
Page Count: 208
Year Published: 2017
Language: English

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